30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Nanotechnology
سال: 2019
ISSN: 1536-125X,1941-0085
DOI: 10.1109/tnano.2018.2888640